ON Semiconductor Senior Principal Silicon Development Engineer in Roznov pod Radhostem, Czech Republic

Successful candidate will:

· Develop next generation power semiconductor technology platforms and derivatives

· Invent novel designs and device architectures of silicon devices, mainly IGBT and diodes

· Integrate processes for manufacturing of silicon based power semiconductor devices in a 6“ and 8“ manufacturing facility in Roznov, Czech Republic

· Simulate power silicon devices and processes by means of TCAD

· Optimize device design and process integration for manufacutrability, reliability, and yield

· Characterize electrical parameters of power semiconductor devices

· Process and analyze data from experiments

· Qualify new technologies to prodcution

· Support production ramp and yield improvement

· Lead and manage a small team of 2-3 enigneers

· Cooperate with global R&D, Application, Packaging, and Reliability teams

· Report to Director of Corporate R&D, IGBT and Diode Technology Development

· Master Degree or PhD in Electrical Engineering or Physics

· Good knowledge of semiconductor device physics, technologies of semiconductor processing, and material science

· Knowledge of silicon power devices, especially IGBT and diodes.

· Hands on experience with power semiconductor testing

· Experiences with finite element method, Synopsys TCAD preferred

· Highly organized, capable to manage a small technical team

· Good communication and presentation srkills

· Fluent in English, written and spoken

· Analytical thinking, goal oriented, team player

Job: Engineering

Title: Senior Principal Silicon Development Engineer

Location: CZ-CZ-Roznov pod Radhostem

Requisition ID: 1706754

ON Semiconductor is an Equal Employment Opportunity Employer and prohibits discrimination on the basis of age, race, color, religion, gender, sexual orientation, national origin, citizenship, protected veteran status, disability status, or any other federal, state or local protected classes. ON is committed to providing equal employment opportunity to qualified individuals, regardless of protect class status.