ON Semiconductor ENGR SR PRIN, DEVICE_TL in Bucheon, South Korea
High-voltage (HV) SuperJunction (SJ) FET technology device engineer, working closely together with unit process development (UPD) team
Setting up a new device structure and process module required for a new HV SJ FET technology development, working together with UPD team in CRD
Planning DOEs to realize our new idea and evaluation data analysis for each learning cycle
Cost analysis, yield analysis & yield-up activities for new HV SJ FET technologies
Derivative technology development with new process modules, based on our proven technology
BS degree (MS preferred) in engineering school
10 years experience in power device design, preferably in HV power device technology area
Good understanding basic power device physics and TCAD skill sets
Understanding of wafer fabrication processes
Excellent oral and written English communication skills
Organization: 506 OU Fairchild Korea Semiconductor, Ltd.
Title: ENGR SR PRIN, DEVICETL_
Location: KR-KR-Bucheon-si, Gyeonggi-do
Requisition ID: 1704575
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